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MX043J - RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Product Overview

Microsemi

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MX043J RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET by Microsemi - Datasheet Preview — Datasheet preview – MX043J

Datasheet Details

Part number	MX043J
Manufacturer	Microsemi
File Size	183.11 KB
Description	RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	MX043J Datasheet
Note	This datasheet PDF includes multiple part numbers: MX043J, MX043. Please refer to the document for exact specifications by model.
Additional preview pages of the MX043J datasheet.

Product details

Description

SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS PD Tj Tstg IS ISM θJC MAX.

Features

Harris FSC260R die total dose: 100 kRAD(Si) within pre-radiation parameter limits dose rate: 3 x 109 RAD(Si)/sec @ 80%BVDSS typical dose rate: 2 x 1012 RAD(Si)/sec @ ID ≤ IDM typical neutron: 1013 neutrons/cm2 within pre-radiation parameter limits photocurrent: 17 nA/RAD(Si)/sec typical rated Safe Operating Area Curve for Single event Effects rugged polysilicon gate cell structure with u.

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Published: Dec 18, 2013 |