MX043J - RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Product Overview

Microsemi

Datasheet Details

Part number	MX043J
Manufacturer	Microsemi
File Size	183.11 KB
Description	RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet	MX043J Datasheet
Note	This datasheet PDF includes multiple part numbers: MX043J, MX043. Please refer to the document for exact specifications by model.
Additional preview pages of the MX043J datasheet.

Product details

Description

Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25° C RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS PD Tj Tstg IS ISM θJC MAX.200 200 +/-20 +/-30 44 28 132 44 tbd tbd 300 -55 to +125 -55 to +125 44 132 0.25 UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ Watts ° C ° C Amps Amps ° C/W grams VDSmax 200V 200V 160V 100V 40V Drain-to-Gate Breakdown Voltage @ TJ ≥ Continuous Gate-to-Source Voltage

Features

Harris FSC260R die total dose: 100 kRAD(Si) within pre-radiation parameter limits dose rate: 3 x 109 RAD(Si)/sec @ 80%BVDSS typical dose rate: 2 x 1012 RAD(Si)/sec @ ID ≤ IDM typical neutron: 1013 neutrons/cm2 within pre-radiation parameter limits photocurrent: 17 nA/RAD(Si)/sec typical rated Safe Operating Area Curve for Single event Effects rugged polysilicon gate cell structure with u.

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Published: Dec 18, 2013 |