The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
SD1060
RF & MICROWAVE TRANSISTORS VHF - UHF APPLICATIONS
Features
• • • • • 400 MHz 28 VOLTS POUT = 5.0 WATTS GP = 4.7 dB MINIMUM COMMON EMITTER CONFIGURATION
DESCRIPTION:
This silicon epitaxial NPN planar high frequency transistor employs a multi emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters results in high RF current handling capability, high power gain, low base resistance and low output capacitance. These transistors are intended for Class A, B, or C amplifier, oscillator or frequency multiplier circuits and are specifically designed for operation in the VHF-UHF region.
SD1060 Datasheet
