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SD1060 - RF & MICROWAVE TRANSISTORS

Datasheet Summary

Description

This silicon epitaxial NPN planar high frequency transistor employs a multi emitter electrode design.

Features

  • 400 MHz 28 VOLTS POUT = 5.0 WATTS GP = 4.7 dB.

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Datasheet preview – SD1060

Datasheet Details

Part number SD1060
Manufacturer Microsemi
File Size 69.54 KB
Description RF & MICROWAVE TRANSISTORS
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Full PDF Text Transcription

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 SD1060 RF & MICROWAVE TRANSISTORS VHF - UHF APPLICATIONS Features • • • • • 400 MHz 28 VOLTS POUT = 5.0 WATTS GP = 4.7 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: This silicon epitaxial NPN planar high frequency transistor employs a multi emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters results in high RF current handling capability, high power gain, low base resistance and low output capacitance. These transistors are intended for Class A, B, or C amplifier, oscillator or frequency multiplier circuits and are specifically designed for operation in the VHF-UHF region.
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