SD1060 Datasheet | Microsemi

140 MERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS VHF - UHF APPLICATIONS Features - - - - - 400 MHz 28 VOLTS POUT = 5.0 WATTS GP = 4.7 dB MINIMUM MON EMITTER CONFIGURATION DESCRIPTION: This silicon epitaxial NPN planar high frequency transistor employs a multi emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters results in high RF current handling capability, high power gain, low base resistance and low output capacitance. These transistors are intended for Class A, B, or C amplifier, oscillator or frequency multiplier circuits and are...