SD1060
Overview
This silicon epitaxial NPN planar high frequency transistor employs a multi emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters results in high RF current handling capability, high power gain, low base resistance and low output capacitance.
- 400 MHz 28 VOLTS POUT = 5.0 WATTS GP = 4.7 dB MINIMUM COMMON EMITTER CONFIGURATION
