MSAHX60F60A Description
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM Imax PD Tj Tstg IS ISM θJC MAX. I C = 30 A T J = 25°C T J = 125°C TJ = 25°C T J = 125°C T J = 25°C T J = 25°C T J = 125°C MIN 600 2.5 TYP.
MSAHX60F60A Key Features
- Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount