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XB1009-BD - GaAs MMIC Buffer Amplifier

Datasheet Summary

Description

Mimix Broadband’s three stage 14.0-30.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 18.0 dB with a +22.0 dBm P1dB output compression point.

Features

  • Excellent Transmit LO/Output Buffer Stage On-Chip ESD Protection 18.0 dB Small Signal Gain +22.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General.

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Datasheet preview – XB1009-BD

Datasheet Details

Part number XB1009-BD
Manufacturer Mimix Broadband
File Size 299.05 KB
Description GaAs MMIC Buffer Amplifier
Datasheet download datasheet XB1009-BD Datasheet
Additional preview pages of the XB1009-BD datasheet.

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Full PDF Text Transcription

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14.0-30.0 GHz GaAs MMIC Buffer Amplifier February 2007 - Rev 05-Feb-07 B1009-BD Chip Device Layout Features Excellent Transmit LO/Output Buffer Stage On-Chip ESD Protection 18.0 dB Small Signal Gain +22.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband’s three stage 14.0-30.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 18.0 dB with a +22.0 dBm P1dB output compression point. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.
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