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XB1009-QT - GaAs MMIC Buffer Amplifier

Datasheet Summary

Description

Mimix Broadband’s three stage 12.0-27.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 16.0 dB with a +22.0 dBm P1dB output compression point across much of the band.

Features

  • Excellent Transmit LO/Output Buffer Stage On-Chip ESD Protection 16.0 dB Small Signal Gain +22.0 dBm P1dB Compression Point RoHS Compliant SMD, 3x3 mm QFN Package 100% RF, DC, and Output Power Testing General.

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Datasheet Details

Part number XB1009-QT
Manufacturer Mimix Broadband
File Size 293.01 KB
Description GaAs MMIC Buffer Amplifier
Datasheet download datasheet XB1009-QT Datasheet
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Full PDF Text Transcription

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12.0-27.0 GHz GaAs MMIC Buffer Amplifier, QFN February 2007 - Rev 08-Feb-07 B1009-QT Features Excellent Transmit LO/Output Buffer Stage On-Chip ESD Protection 16.0 dB Small Signal Gain +22.0 dBm P1dB Compression Point RoHS Compliant SMD, 3x3 mm QFN Package 100% RF, DC, and Output Power Testing General Description Mimix Broadband’s three stage 12.0-27.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 16.0 dB with a +22.0 dBm P1dB output compression point across much of the band. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The device comes in a RoHS compliant 3x3mm QFN Surface Mount Package offering excellent RF and thermal properties.
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