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XP1001 - GaAs MMIC Power Amplifier

General Description

Mimix Broadband’s two stage 26.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +31.0 dBm.

The device also includes Lange couplers to achieve good input/output return loss and an on-chip temperature compensated output power detector.

Key Features

  • High Linearity Wideband Amplifier On-Chip Temperature Compensated Output Power Detector Balanced Design Provides Good Input/Output Match 11.0 dB Small Signal Gain +31.0 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General.

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Datasheet Details

Part number XP1001
Manufacturer Mimix Broadband
File Size 273.79 KB
Description GaAs MMIC Power Amplifier
Datasheet download datasheet XP1001 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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26.0-40.0 GHz GaAs MMIC Power Amplifier May 2005 - Rev 05-May-05 P1001 Chip Device Layout Features High Linearity Wideband Amplifier On-Chip Temperature Compensated Output Power Detector Balanced Design Provides Good Input/Output Match 11.0 dB Small Signal Gain +31.0 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband’s two stage 26.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +31.0 dBm. The device also includes Lange couplers to achieve good input/output return loss and an on-chip temperature compensated output power detector. This MMIC uses Mimix Broadband’s 0.