Datasheet Details
| Part number | XP1003-BD |
|---|---|
| Manufacturer | Mimix Broadband |
| File Size | 556.31 KB |
| Description | Power Amplifier |
| Datasheet | XP1003-BD-MimixBroadband.pdf |
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Overview: 27.0-35.0 GHz GaAs MMIC Power Amplifier April 2007 - Rev 02-Apr-07.
| Part number | XP1003-BD |
|---|---|
| Manufacturer | Mimix Broadband |
| File Size | 556.31 KB |
| Description | Power Amplifier |
| Datasheet | XP1003-BD-MimixBroadband.pdf |
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Mimix Broadband’s two stage 27.0-35.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +34.0 dBm.The device also includes Lange couplers to achieve good input/output return loss and an on-chip temperature pensated output power detector.This MMIC uses Mimix Broadband’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.
The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SAT and VSAT applications.
XP1003-BD Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 950 mA +0.3 VDC +15 dBm -65 to +165 OC -55 to MTTF Table 4 MTTF Table 4 (4) Channel temperature affects a device's MTTF.
| Part Number | Description |
|---|---|
| XP1003 | GaAs MMIC Power Amplifier |
| XP1000 | GaAs MMIC Power Amplifier |
| XP1000-BD | GaAs MMIC Power Amplifier |
| XP1001 | GaAs MMIC Power Amplifier |
| XP1005 | GaAs MMIC Power Amplifier |
| XP1006 | GaAs MMIC Power Amplifier |
| XP1006-FA | GaAs MMIC Power Amplifier |
| XP1008 | GaAs MMIC Power Amplifier |
| XP1009 | GaAs MMIC Power Amplifier |
| XP1010 | GaAs MMIC Power Amplifier |