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XP1003 - GaAs MMIC Power Amplifier

General Description

(4) Channel temperature affects a device's MTTF.

Key Features

  • Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 15.0 dB Small Signal Gain +34.0 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness (∆S21) Reverse Isolation (S12) Output Power for 1 dB Compr.

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Datasheet Details

Part number XP1003
Manufacturer Mimix Broadband
File Size 1.59 MB
Description GaAs MMIC Power Amplifier
Datasheet download datasheet XP1003 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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27.0-35.0 GHz GaAs MMIC Power Amplifier May 2005 - Rev 05-May-05 P1003 Chip Device Layout Features Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 15.0 dB Small Signal Gain +34.0 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness (∆S21) Reverse Isolation (S12) Output Power for 1 dB Compression (P1dB) 2 Output Third Order Intercept Point (OIP3) 1,2 Drain Bias Voltage (Vd1,2,3,4) Gate Bias Voltage (Vg1,2,3,4) Supply Current (Id) (Vd=4.5V, Vg=-0.