XP1003 Datasheet | Mimix Broadband

Features Balanced Design Provides Good Input/Output Match On-Chip Temperature pensated Output Power Detector 15.0 d B Small Signal Gain +34.0 d Bm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Electrical Characteristics (Ambient Temperature T = 25 o C) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness (∆S21) Reverse Isolation (S12) Output Power for 1 d B pression (P1d B) 2 Output Third Order Intercept Point (OIP3) 1,2 Drain Bias Voltage (Vd1,2,3,4) Gate Bias Voltage (Vg1,2,3,4) Supply Current (Id) (Vd=4.5V, Vg=-0.7V Typical) Detector (diff ) Output at 20 d Bm 3 Units GHz d B d B d B d B d B d Bm d Bm VDC VDC m A VDC Min. 27.0 -1.0 Typ. 12.0 18.0 15.0 +/-1.0 35.0 +24.0 +34.0 +4.5 -0.7 440 0.3 Max. 35.0 +5.5 0.0 880 - Pr (1) Measured at +17 d Bm per tone output carrier level across the full frequency band. (2) Measured using constant current. (3) Measured with either Vin=1.0V or Vin=5.5V and Rin=5.6kΩ. e- pr Mimix Broadband’s two stage 27.0-35.0 GHz Ga As MMIC power amplifier is optimized for linear operation with a third order intercept point of +34.0 d Bm. The device also includes Lange couplers to achieve good input/output return loss and an on-chip temperature pensated output power detector. This MMIC uses Mimix Broadband’s 0.15 µm Ga As PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect .. and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SAT and VSAT applications. General Description uc Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel...