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XP1021-BD - GaAs MMIC Power Amplifier

Datasheet Summary

Description

Mimix Broadband’s three stage 17.0-22.0 GHz GaAs MMIC power amplifier has a small signal gain of 22.0 dB with a +27.0 dBm saturated output power.

Features

  • Excellent Saturated Output Stage 22.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General.

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Datasheet Details

Part number XP1021-BD
Manufacturer Mimix Broadband
File Size 267.45 KB
Description GaAs MMIC Power Amplifier
Datasheet download datasheet XP1021-BD Datasheet
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17.0-22.0 GHz GaAs MMIC Power Amplifier April 2007 - Rev 17-Apr-07 P1021-BD Chip Device Layout XP1021-BD Features Excellent Saturated Output Stage 22.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband’s three stage 17.0-22.0 GHz GaAs MMIC power amplifier has a small signal gain of 22.0 dB with a +27.0 dBm saturated output power. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.
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