CR03AM Datasheet | Mitsubishi Electric

MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE OUTLINE DRAWING φ5.0 MAX 4.4 Dimensions in mm VOLTAGE CLASS TYPE NAME 3 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL CIRCUMSCRIBE CIRCLE φ0.7 1.25 1.25 12.5 MIN 5.0 MAX 0.47 0.3 20 1.6 0.5 0.1 6 6 0.3 0.23 1 3 2 - IT (AV) 0.3A - VDRM 400V/600V - IGT 100µ A APPLICATION Leakage protector, timer, gas ignitor MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) VDRM VDSM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage V1 JEDEC : TO-92 Voltage class 8 400 500 320 400 500 320 12 600 800 480 600 800 480 Non-repetitive peak off-state voltage V1 V1 Symbol IT (RMS) IT (AV) ITSM I2t PGM PG (AV) VFGM VRGM IFGM Tj Tstg - Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Conditions mercial frequency, sine half wave, 180° conduction, Ta=47° C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Weight Typical value - 40 ~ +110 - 40 ~ +125 V1. With gate to cathode resistance RGK=1k Ω. Feb.1999 3.9 MAX Unit V V V V V V Unit A A A A2s W W V V A °C °C g MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 LOW POWER...