CR05AS Datasheet | Mitsubishi Electric

MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE OUTLINE DRAWING Dimensions in mm 4.4±0.1 1.6±0.2 1.5±0.1 2.5±0.1 0.8 MIN 0.5±0.07 0.4±0.07 1.5±0.1 1.5±0.1 (Back side) 2 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL 0.4 +0.03 - 0.05 - IT (AV) 0.5A - VDRM 200V/400V - IGT 100µ A APPLICATION Solid state relay, strobe flasher, ignitor, hybrid IC SOT-89 MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) VDRM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage V1 V1 Voltage class 4 (marked “CB”) 200 300 160 200 160 8 (marked “CD”) 400 500 320 400 320 3.9±0.3 Unit V V V V V Symbol IT (RMS) IT (AV) ITSM I2t PGM PG (AV) VFGM VRGM IFGM Tj Tstg - Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Conditions mercial frequency, sine half wave, 180° conduction, Ta=57° C V2 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 0.79 0.5 10 0.4 0.1 0.01 6 6 0.1 - 40 ~ +125 - 40 ~ +125 Unit A A A A2s W W V V A °C °C mg Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Weight Typical value V1. With Gate-to-cathode resistance RGK =1kΩ Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION...