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MGFK38A3745 - power GaAs FET

Description

The MGFK38A3745 is an internally impedance-matched GaAs power FET especially designed for use in 13.75

14.50 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Features

  • Class A operation Internally matched to 50(ohm) system.
  • High output power P1dB=6W (TYP. ) @f=13.75.
  • 14.50GHz.
  • High linear power gain GLP=8.0dB (TYP. ) @f=13.75.
  • 14.50GHz.
  • High power added efficiency P. A. E. =30% (TYP. ) @f=13.75.
  • 14.50GHz.

📥 Download Datasheet

Datasheet preview – MGFK38A3745

Datasheet Details

Part number MGFK38A3745
Manufacturer Mitsubishi Electric Semiconductor
File Size 192.20 KB
Description power GaAs FET
Datasheet download datasheet MGFK38A3745 Datasheet
Additional preview pages of the MGFK38A3745 datasheet.

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Full PDF Text Transcription

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< X/Ku band internally matched power GaAs FET > MGFK38A3745 13.75 – 14.50 GHz BAND / 6W DESCRIPTION The MGFK38A3745 is an internally impedance-matched GaAs power FET especially designed for use in 13.75 – 14.50 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=6W (TYP.) @f=13.75 – 14.50GHz  High linear power gain GLP=8.0dB (TYP.) @f=13.75 – 14.50GHz  High power added efficiency P.A.E.=30% (TYP.) @f=13.75 – 14.50GHz APPLICATION  13.75 – 14.50 GHz band power amplifiers QUALITY GRADE  IG RECOMMENDED BIAS CONDITIONS  VDS=10V  ID=1.
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