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MGFK38A3745 Datasheet power GaAs FET

Manufacturer: Mitsubishi Electric

General Description

The MGFK38A3745 is an internally impedance-matched GaAs power FET especially designed for use in 13.75 – 14.50 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Overview

< X/Ku band internally matched power GaAs FET > MGFK38A3745 13.75 – 14.

Key Features

  • Class A operation Internally matched to 50(ohm) system.
  • High output power P1dB=6W (TYP. ) @f=13.75.
  • 14.50GHz.
  • High linear power gain GLP=8.0dB (TYP. ) @f=13.75.
  • 14.50GHz.
  • High power added efficiency P. A. E. =30% (TYP. ) @f=13.75.
  • 14.50GHz.