CM800DZ-34H Datasheet | Mitsubishi Electric

.. MITSUBISHI HVIGBT MODULES 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800DZ-34H q IC 800A q VCES 1700V q Insulated Type q 2-element in a Pack q AISi C Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 114 57±0.25 57±0.25 - M8 NUTS 4(E1) E1 2(C2) C2 E1 C2 124±0.25 140 30 G1 G2 C1 3(C1) 1(E2) E2 C1 E2 E1 G1 C1 C2 G2 E2 CIRCUIT DIAGRAM 16 40 6 - M4 NUTS 53 18 44 57 55.2 - φ 7 MOUNTING HOLES 11.85 screwing depth min. 7.7 screwing depth min. 16.5 5 35 11.5 14 38 +2 0 28 +2 0 HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules LABEL Jul. 2005 MITSUBISHI HVIGBT MODULES 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED...