CM800E6C-66H Datasheet | Mitsubishi Electric

.. MITSUBISHI HVIGBT MODULES 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800E6C-66H q IC 800A q VCES 3300V q Insulated Type q 1-element in a Pack (for brake) q AISi C Baseplate APPLICATION Traction drives, DC choppers, Dynamic braking choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 57 ±0.1 190 ±0.5 171 ±0.1 57 ±0.1 57 ±0.1 - M8 NUTS C 20 - 0.2 +0.1 K (C) G E 124 ±0.1 140 ±0.5 40 ±0.2 E E A (E) CIRCUIT DIAGRAM 20.25 ±0.2 41.25 ±0.3 3 - M4 NUTS 79.4 ±0.3 61.5 ±0.3 61.5 ±0.3 13 ±0.2 5 ±0.15 38 +1 0 screwing depth min. 16.5 - φ7 ±0.1 MOUNTING HOLES 15 ±0.2 40 ±0.3 5.2 ±0.2 29.5 ±0.5 screwing depth min. 7.7 28 +1 0 LABEL HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED...