CM800E6C-66H Description
MITSUBISHI HVIGBT MODULES CM800E6C-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800E6C-66H q IC ................................................................... 800A q VCES ....................................................... 7.7 28 +1 0 LABEL HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul.