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MITSUBISHI HVIGBT MODULES
CM800E2C-66H
HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE
CM800E2C-66H
q IC ................................................................... 800A q VCES ....................................................... 3300V q Insulated Type q 1-elements in a pack (for brake) q AISiC base plate
APPLICATION DC choppers, Dynamic braking choppers.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57 ±0.25
190 171 57 ±0.25
57 ±0.25
6 - M8 NUTS C
C
C
K (C)
G E
124 ±0.25 140
C
C
C
40
20
E
E
A (E)
CM
E
E
E
CIRCUIT DIAGRAM
C
E
G
20.25 41.25 3 - M4 NUTS 79.4 61.5 13 61.5 5.
CM800E2C-66H Datasheet
