CM800E2C-66H Overview
MITSUBISHI HVIGBT MODULES CM800E2C-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800E2C-66H q IC ................................................................... 800A q VCES ....................................................... 3300V q Insulated Type q 1-elements in a pack (for brake) q AISiC base plate APPLICATION DC choppers, Dynamic...