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MITSUBISHI HVIGBT MODULES
CM800HC-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
CM800HC-66H
q IC ................................................................... 800A q VCES ....................................................... 3300V q Insulated Type q 1-element in a Pack q AISiC Baseplate
APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
130±0.5 114±0.1 57±0.1 57±0.1 4 - M8 NUTS
C
C
20 –0.2
+0.1
C
C
C
124±0.1
140±0.5
40±0.2
G E E E
CM C
E
E
E
G
CIRCUIT DIAGRAM
3 - M4 NUTS
10.35±0.2 10.65±0.2 48.8±0.3
6 - φ7±0.1MOUNTING HOLES
61.5±0.3
screwing depth min. 7.7
screwing depth min. 16.
CM800HC-66H Datasheet
