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M63827WP - (M63827xP) 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY

Download the M63827WP datasheet PDF. This datasheet also covers the M63827DP variant, as both devices belong to the same (m63827xp) 7-unit 500ma darlington transistor array family and are provided as variant models within a single manufacturer datasheet.

General Description

M63827WP and M63827DP are seven-circuit Darlington transistor arrays with clamping diodes.

The circuits are made of NPN transistors.

Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.

Key Features

  • Two package configurations (WP/DP) High breakdown voltage (BVCEO ≥ 50V) High-current driving (Ic(max) = 500mA) With clamping diodes Driving available with TTL, PMOS IC output Wide operating temperature range (Ta =.
  • 40 to +85° C) 16P4X-A(WP) Package type 16P2X-B(DP).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M63827DP_MitsubishiElectric.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com MITSUBISHI SEMICONDUCTOR M63827WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63827WP and M63827DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.