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M63828DP - (M63828xP) 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY

General Description

M63828WP and M63828DP are seven-circuit Darlington transistor arrays with clamping diodes.

The circuits are made of NPN transistors.

Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.

Key Features

  • Two package configurations (WP/DP) High breakdown voltage (BVCEO ≥ 50V) High-current driving (Ic(max) = 500mA) With clamping diodes Driving available with TTL, PMOS IC output Wide operating temperature range (Ta =.
  • 40 to +85° C) 16P4X-A(WP) Package type 16P2X-B(DP).

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www.DataSheet4U.com MITSUBISHI SEMICONDUCTOR M63828WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63828WP and M63828DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.