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M63840KP - (M63840xP) 8-Unit 500mA Source Type Darlington Transistor-Array

Download the M63840KP datasheet PDF. This datasheet also covers the M63840P variant, as both devices belong to the same (m63840xp) 8-unit 500ma source type darlington transistor-array family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High breakdown v oltage (BVCEO≧ 40V) High-current driv ing (I O(max)=-500mA ) With output clamping diodes Driv ing av ailable with TTL output or C-MOS IC output Wide operating temperature range (Ta= -40~+85℃) Output current-sourcing ty pe IN5 → 5 IN6 → 6 IN7 → 7 IN8 → 8 Vs 9 OUTPUT 14 →O5 13 →O6 12 →O7 11 →O8 10 GND Package type 18P4G(P).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M63840P_MitsubishiElectric.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com MITSUBISHI SEMICONDUCTOR 【TRANSISTOR ARRAY】 PRELIMINARY M63840P/FP/KP *Notice: This is not a f inal specif ication. Some parametric limits are subject to change. 8-Unit 500mA Source Type Darlington Transistor-Array With Clamp Diode DESCRIPT ION M63840P/FP/KP are eight-circuit output-sourcing Darlington transistor array .The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perf orm high-current driv ing with extremely low input-current supply .