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M63840P - (M63840xP) 8-Unit 500mA Source Type Darlington Transistor-Array

Key Features

  • High breakdown v oltage （BVCEO≧ 40V） High-current driv ing （I O(max)＝－500mA ） With output clamping diodes Driv ing av ailable with TTL output or C-MOS IC output Wide operating temperature range (Ta= -40～+85℃) Output current-sourcing ty pe IN5 → 5 IN6 → 6 IN7 → 7 IN8 → 8 Vs 9 OUTPUT 14 →O5 13 →O6 12 →O7 11 →O8 10 GND Package type 18P4G(P).

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Other Datasheets by Mitsubishi Electric

Part Number Description
M63840FP (M63840xP) 8-Unit 500mA Source Type Darlington Transistor-Array
M63840KP (M63840xP) 8-Unit 500mA Source Type Darlington Transistor-Array
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www.DataSheet4U.com MITSUBISHI SEMICONDUCTOR 【TRANSISTOR ARRAY】 PRELIMINARY M63840P/FP/KP ＊Notice: This is not a f inal specif ication. Some parametric limits are subject to change. 8-Unit 500mA Source Type Darlington Transistor-Array With Clamp Diode DESCRIPT ION M63840P/FP/KP are eight-circuit output-sourcing Darlington transistor array .The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perf orm high-current driv ing with extremely low input-current supply .