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RD05MMP1 - Silicon RF Power MOS FET

General Description

RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.

Key Features

  • High power gain: Pout>5.5W, Gp>8.9dB@Vdd=7.2V,f=941MHz.
  • High Efficiency: 43%min. (941MHz).
  • No gate protection diode INDEX MARK [Gate] (4.5) 0.95+/-0.2 2.6+/-0.2 TOP VIEW DETAIL A SIDE VIEW 1.8+/-0.1 BOTTOM VIEW Terminal No. (a)Drain [output] (b)Source [GND] (c)Gate [input] (d)Source.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD05MMP1 (a) 0.2+/-0.05 0.65+/-0.2 (c) (b) 7.0+/-0.2 (b) 8.0+/-0.2 6.2+/-0.2 4.2+/-0.2 5.6+/-0.2 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W DESCRIPTION RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications. (3.6) OUTLINE DRAWING (d) FEATURES •High power gain: Pout>5.5W, Gp>8.9dB@Vdd=7.2V,f=941MHz •High Efficiency: 43%min. (941MHz) •No gate protection diode INDEX MARK [Gate] (4.5) 0.95+/-0.2 2.6+/-0.2 TOP VIEW DETAIL A SIDE VIEW 1.8+/-0.1 BOTTOM VIEW Terminal No. (a)Drain [output] (b)Source [GND] (c)Gate [input] (d)Source APPLICATION For output stage of high power amplifiers in 941MHz band mobile radio sets.