Datasheet Summary
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
(a) 0.2+/-0.05 0.65+/-0.2 (c) (b) 7.0+/-0.2 (b) 8.0+/-0.2 6.2+/-0.2 4.2+/-0.2 5.6+/-0.2
RoHS pliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W DESCRIPTION
RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.
(3.6)
OUTLINE DRAWING
(d)
Features
- High power gain: Pout>5.5W, Gp>8.9dB@Vdd=7.2V,f=941MHz
- High Efficiency: 43%min. (941MHz)
- No gate protection diode
INDEX MARK [Gate]
(4.5)
0.95+/-0.2
2.6+/-0.2
TOP VIEW
DETAIL A
SIDE VIEW
1.8+/-0.1
BOTTOM VIEW
Terminal No. (a)Drain [output] (b)Source [GND] (c)Gate [input] (d)Source
APPLIC...