Datasheet Details
| Part number | RD06HHF1 |
|---|---|
| Manufacturer | Mitsubishi Electric |
| File Size | 571.80 KB |
| Description | Silicon RF Power MOS FET |
| Datasheet | RD06HHF1_MitsubishiElectric.pdf |
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Overview: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HHF1 9.1+/-0.7 1.3+/-0.4 3.6+/-0.
| Part number | RD06HHF1 |
|---|---|
| Manufacturer | Mitsubishi Electric |
| File Size | 571.80 KB |
| Description | Silicon RF Power MOS FET |
| Datasheet | RD06HHF1_MitsubishiElectric.pdf |
|
|
|
RD06HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.
OUTLINE DRAWING 3.2+/-0.4 4.8MAX 9+/-0.4 •High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz 12.3+/-0.6
| Part Number | Description |
|---|---|
| RD00HHS1 | RoHS Compliance |
| RD00HVS1 | RoHS Compliance |
| RD01MUS1 | Silicon RF Power MOS FET |
| RD01MUS2 | Silicon MOSFET Power Transistor |
| RD02MUS1 | Silicon MOSFET Power Transistor |
| RD02MUS2 | RoHS Compliance |
| RD05MMP1 | Silicon RF Power MOS FET |
| RD07MVS1 | Silicon MOSFET Power Transistor |
| RD09MUP2 | Silicon MOSFET Power Transistor |