RD06HHF1 Overview
RD06HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. OUTLINE DRAWING 3.2+/-0.4 4.8MAX 9+/-0.4 High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz 12.3+/-0.6.
RD06HHF1 datasheet by Mitsubishi Electric.
| Part number | RD06HHF1 |
|---|---|
| Datasheet | RD06HHF1_MitsubishiElectric.pdf |
| File Size | 571.80 KB |
| Manufacturer | Mitsubishi Electric |
| Description | Silicon RF Power MOS FET |
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RD06HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. OUTLINE DRAWING 3.2+/-0.4 4.8MAX 9+/-0.4 High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz 12.3+/-0.6.
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