Datasheet4U Logo Datasheet4U.com

RD06HHF1 - Silicon RF Power MOS FET

General Description

RD06HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.

High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz 12.3+/-0.6

Key Features

  • 2 For output stage of high power amplifiers in HF band mobile radio sets. 12.3MIN.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RD06HVF1 MOS FET type transistor specifically designed for VHF RF power amplifiers applications Mitsubishi Electric Semiconductor
RD0605-D Solid State Relays CARLO GAVAZZI
RD0106T High-Speed Switching Diode Sanyo Semicon Device
RD01MUS2B Silicon MOSFET Power Transistor Mitsubishi Electric Semiconductor
RD02LUS2 Silicon RF Power MOS FET Mitsubishi

Other Datasheets by Mitsubishi Electric

Part Number Description
RD00HHS1 RoHS Compliance
RD00HVS1 RoHS Compliance
RD01MUS1 Silicon RF Power MOS FET
RD01MUS2 Silicon MOSFET Power Transistor
RD02MUS1 Silicon MOSFET Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HHF1 9.1+/-0.7 1.3+/-0.4 3.6+/-0.2 Silicon MOSFET Power Transistor 30MHz,6W DESCRIPTION RD06HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. OUTLINE DRAWING 3.2+/-0.4 4.8MAX 9+/-0.4 •High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz 12.3+/-0.6 FEATURES 2 For output stage of high power amplifiers in HF band mobile radio sets. 12.3MIN APPLICATION 1.2+/-0.4 0.8+0.10/-0.15 1 2 3 0.5+0.10/-0.15 2.5 2.5 3.1+/-0.6 4.5+/-0.5 5deg PIN 1.Gate 2.Source 3.Drain UNIT:mm 9.5MAX ABSOLUTE MAXIMUM RATINGS www.DataSheet4U.