Datasheet Summary
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
9.1+/-0.7 1.3+/-0.4 3.6+/-0.2
Silicon MOSFET Power Transistor 30MHz,6W DESCRIPTION
RD06HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. OUTLINE DRAWING
3.2+/-0.4
4.8MAX
9+/-0.4
- High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz
12.3+/-0.6
Features
For output stage of high power amplifiers in HF band mobile radio sets.
12.3MIN
APPLICATION
1.2+/-0.4 0.8+0.10/-0.15
1 2 3
0.5+0.10/-0.15 2.5 2.5 3.1+/-0.6 4.5+/-0.5
5deg
PIN 1.Gate 2.Source 3.Drain...