M2V12D20TP-10 - 512M Double Data Rate Synchronous DRAM

This page provides the datasheet information for the M2V12D20TP-10, a member of the M2V 512M Double Data Rate Synchronous DRAM family.

Product Overview

Mitsubishi

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Datasheet Details

Part number	M2V12D20TP-10
Manufacturer	Mitsubishi
File Size	754.04 KB
Description	512M Double Data Rate Synchronous DRAM
Datasheet	M2V12D20TP-10 Datasheet
Additional preview pages of the M2V12D20TP-10 datasheet.

M2V12D20TP-10 Product details

Description

M2S12D20TP is a 4-bank x 33,554,432-word x 4-bit, M2S12D30TP is a 4-bank x 16,777,216-word x 8-bit, double data rate synchronous DRAM, with SSTL_2 interface.

All control and address signals are referenced to the rising edge of CLK.

Features

- Vdd=Vddq=2.5V+0.2V - Double data rate architecture; two data transfers per clock cycle - Bidirectional, data strobe (DQS) is transmitted/received with data - Differential clock inputs (CLK and /CLK) - DLL aligns DQ and DQS transitions - Commands are entered on each positive CLK edge; - data and data mask are referenced to both edges of DQS - 4 bank operations are controlled by BA0, BA1 (Bank Address) - /CAS latency- 2.0/2.5 (programmable) - Burst length- 2/4/8 (programmable) - Burst type- sequ.

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M2V12D20TP - 512M Double Data Rate Synchronous DRAM
M2V12D30TP - 512M Double Data Rate Synchronous DRAM
M2V12D30TP-10 - 512M Double Data Rate Synchronous DRAM
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Published: May 2, 2005 |