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M2V64S20BTP-6

Manufacturer: Mitsubishi Electric
M2V64S20BTP-6 datasheet preview

Datasheet Details

Part number M2V64S20BTP-6
Datasheet M2V64S20BTP-6_MitsubishiElectricSemiconductor.pdf
File Size 655.47 KB
Manufacturer Mitsubishi Electric
Description 64M bit Synchronous DRAM
M2V64S20BTP-6 page 2 M2V64S20BTP-6 page 3

M2V64S20BTP-6 Overview

All inputs and outputs are referenced to the rising edge of CLK. M2V64S20BTP,M2V64S30BTP,M2V64S40BTP achieves very high speed data rates up to 133MHz, and is suitable for main memory or graphic memory in puter systems.

M2V64S20BTP-6 Key Features

  • Single 3.3V ±0.3V power supply
  • Max. Clock frequency -6 : 133MHz [PC133<3-3-3> ]
  • Fully synchronous operation referenced to clock rising edge
  • 4-bank operation controlled by BA0,BA1(Bank Address)
  • /CAS latency- 2/3 (programmable)
  • Burst length- 1/2/4/8/FP (programmable)
  • Burst type- Sequential and interleave burst (programmable)
  • Random column access
  • Auto precharge / All bank precharge controlled by A10
  • Auto and self refresh
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