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M54567FP Datasheet 4-unit 1.5a Darlington Transistor Array

Manufacturer: Mitsubishi Electric

Overview: MITSUBISHI SEMICONDUCTOR M54567P/FP 4-UNIT 1.

General Description

M54567P and M54567FP are four-circuit Darlington transistor arrays with clamping diodes.

The circuits are made of PNP and NPN transistors.

Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

Key Features

  • High breakdown voltage (BV CEO ≥ 50V) High-current driving (Ic(max) = 1.5A) With clamping diodes Driving available with NMOS IC output Wide operating temperature range (Ta =.
  • 20 to +75°C) OUTPUT2 O2← 7 VCC 8 16P4(P) Package type 16P2N-A(FP).

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