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MITSUBISHI LSls
M5K4164AL-12, -15
65 536-BIT (65 536-WORD BY I-BIT) DYNAMIC RAM
DESCRIPTION
This is a family of 65536-word by l-bit dynamic RAMs, fabricated with the high performance N-channel silicongate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer polysilicon process technology and a single-transistor dynamic storage cell privide high circuit density at reduced costs, and the use of dynamic circuitry including sense amplifiers assures low power dissipation. Multiplexed address inputs permit both a reduction in pins to the 16-pin zigzag inline package configuration and an increase in system densities.
M5K4164AL-15 Datasheet
