M5M29GB - 16 /777 /216-BIT (1048 /576-WORD BY16-BIT) CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY

Product Overview

Mitsubishi

Datasheet Details

Part number	M5M29GB
Manufacturer	Mitsubishi
File Size	200.63 KB
Description	16 /777 /216-BIT (1048 /576-WORD BY16-BIT) CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
Datasheet	M5M29GB Datasheet
Additional preview pages of the M5M29GB datasheet.

Product details

Description

The MITSUBISHI Mobile FLASH M5M29GB/T161BWG are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with alternating BGO (Back Ground Operation) feature.

Features

Organization 1048,576 word x 16bit (M5M29GB/T161BWG) Boot Block M5M29GB161BWG Bottom Boot M5M29GT161BWG Top Boot Other Functions Soft Ware Command Control Selective Block Lock Erase Suspend/Resume Program Suspend/Resume Status Register Read Alternating Back Ground Program/Erase Operation Between Bank(I) and Bank(II) Package 7mm x 8.5mm CSP (Chip Scale Package) - 6 x 8 balls, 0.75mm ball pitch VCC = 2.7~3.6V Supply voltage Access time 90ns (Max. ) Power Dissipation 54 mW (Max. at 5MHz).

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Other Datasheets by Mitsubishi

M5M29GB160BVP - 16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
M5M29GB160BVP-80 - 16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
M5M29GB161BWG - 16 /777 /216-BIT (1048 /576-WORD BY16-BIT) CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
M5M29GT160BVP - 16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
M5M29GT160BVP-80 - 16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
M5M29GT161BWG - 16 /777 /216-BIT (1048 /576-WORD BY16-BIT) CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY

Published: Apr 26, 2005 |