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M5M4V64S20ATP-12 Datasheet

Manufacturer: Mitsubishi Electric

This datasheet includes multiple variants, all published together in a single manufacturer document.

M5M4V64S20ATP-12 datasheet preview

Datasheet Details

Part number M5M4V64S20ATP-12
Datasheet M5M4V64S20ATP-12 M5M Datasheet (PDF)
File Size 1.07 MB
Manufacturer Mitsubishi Electric
Description 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S20ATP-12 page 2 M5M4V64S20ATP-12 page 3

M5M4V64S20ATP-12 Overview

The M5M4V64S20ATP is a 4-bank x 4194304-word x 4-bit Synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M5M4V64S20ATP achieves very high speed data rate up to 125MHz, and is suitable for main memory or graphic memory in puter systems.

M5M4V64S20ATP-12 Key Features

  • Single 3.3v±0.3v power supply
  • Clock frequency 125MHz / 100MHz / 83MHz
  • Fully synchronous operation referenced to clock rising edge
  • 4 bank operation controlled by BA0, BA1 (Bank Address)
  • /CAS latency- 2/3 (programmable)
  • Burst length- 1/2/4/8 (programmable)
  • Burst type- sequential / interleave (programmable)
  • Column access
  • random
  • Auto precharge / All bank precharge controlled by A10
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M5M4V64S30ATP-10L 64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
M5M4V64S30ATP-12 64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
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M5M4V64S30ATP-8A 64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM

M5M4V64S20ATP-12 Distributor

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