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M5M4V64S30ATP-8A Datasheet

Manufacturer: Mitsubishi Electric

This datasheet includes multiple variants, all published together in a single manufacturer document.

M5M4V64S30ATP-8A datasheet preview

Datasheet Details

Part number M5M4V64S30ATP-8A
Datasheet M5M4V64S30ATP-8A M5M Datasheet (PDF)
File Size 1.06 MB
Manufacturer Mitsubishi Electric
Description 64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
M5M4V64S30ATP-8A page 2 M5M4V64S30ATP-8A page 3

M5M4V64S30ATP-8A Overview

The M5M4V64S30ATP is a 4-bank x 2097152-word x 8-bit Synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M5M4V64S30ATP achieves very high speed data rate up to 125MHz, and is suitable for main memory or graphic memory in puter systems.

M5M4V64S30ATP-8A Key Features

  • Single 3.3v±0.3v power supply
  • Clock frequency 125MHz /100MHz
  • Fully synchronous operation referenced to clock rising edge
  • 4 bank operation controlled by BA0, BA1 (Bank Address)
  • /CAS latency- 2/3 (programmable)
  • Burst length- 1/2/4/8/Full Page (programmable)
  • Burst type- sequential / interleave (programmable)
  • Column access
  • random
  • Burst Write / Single Write (programmable)
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Part Number Description
M5M4V64S30ATP-8 64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
M5M4V64S30ATP-8L 64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
M5M4V64S30ATP-10 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S30ATP-10L 64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
M5M4V64S30ATP-12 64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
M5M4V64S20ATP-10 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S20ATP-10L 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S20ATP-12 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S20ATP-8 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S20ATP-8A 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM

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