M68757H Datasheet | Mitsubishi Electric

MITSUBISHI RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3W FM PORTABLE RADIO OUTLINE DRAWING 30±0.2 26.6±0.2 21.2±0.2 2-R1.5±0.1 Dimensions in mm BLOCK DIAGRAM 1 5 1 2 3 4 4 5 0.45 6±1 13.7±1 18.8±1 23.9±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN H46 ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions VGG≤3.5V, ZG=ZL=50Ω f=896-941MHz, ZG=ZL=50Ω f=896-941MHz, ZG=ZL=50Ω f=896-941MHz, ZG=ZL=50Ω Ratings 9.2 4 70 5 -30 to +100 -40 to +100 Unit V V m W W °C °C Note. Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Ω unless otherwise noted) Symbol f PO ηT 2f O ρin Frequency range Output power Total efficiency 2nd. harmonic Input VSWR Stability Load VSWR tolerance Parameter Test conditions Limits Min 896 3 30 Max 941 Unit MHz W % d Bc VDD=7.2V, VGG=3.5V, Pin=50m W ZG=ZL=50Ω, VDD=5-9.2V, Load VSWR <4:1 VDD=9V, Pin=50m W, PO=3W (VGG Adjust), ZL=20:1 -28 4 No parasitic oscillation No degradation or destroy Note. Above parameters, ratings, limits and test conditions are subject to change. Nov. ´97 MITSUBISHI RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3W FM PORTABLE RADIO TYPICAL PERFORMANCE DATA OUTPUT POWER, INPUT VSWR, TOTAL EFFICIENCY 6 5 4 3 2 60 50 40 30 20 1.0 f=896MHz VDD=7.2V VGG=3.5V ZG=ZL=50Ω 0.1 1 10 INPUT POWER Pin (m W) 0.1 100 1.0 10.0 PO 10.0 OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER 100.0 100.0 ηT PO ηT VDD=7.2V ρin 1 VGG=3.5V 10 Pin=50m W ZG=ZL=50 Ω 0 0 880 890 900 910 920 930 940 950 FREQUENCY f (MHz) OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER 100.0 100.0 ηT OUTPUT POWER, TOTAL EFFICIENCY VS. GATE SUPPLY VOLTAGE 5.5 55 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1.5 2.0 2.5 ηT PO 50 45 40 35 30 25 20 15 f=896MHz...