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MITSUBISHI RF POWER MODULE
M68757L
SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3W, FM PORTABLE RADIO
OUTLINE DRAWING
30±0.2 26.6±0.2 21.2±0.2
Dimensions in mm
BLOCK DIAGRAM
2
3
2-R1.5±0.1
1 5 1 2 3 4
4 5
0.45 6±1 13.7±1 18.8±1 23.9±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN
H46
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions VGG≤3.5V, ZG=ZL=50Ω f=806-870MHz, ZG=ZL=50Ω f=806-870MHz, ZG=ZL=50Ω f=806-870MHz, ZG=ZL=50Ω Ratings 9.2 4 70 5 -30 to +100 -40 to +100 Unit V V mW W °C °C
Note. Above parameters are guaranteed independently.
M68757L Datasheet
