M68757L Datasheet | Mitsubishi Electric

MITSUBISHI RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3W, FM PORTABLE RADIO OUTLINE DRAWING 30±0.2 26.6±0.2 21.2±0.2 Dimensions in mm BLOCK DIAGRAM 2-R1.5±0.1 1 5 1 2 3 4 4 5 0.45 6±1 13.7±1 18.8±1 23.9±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN H46 ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions VGG≤3.5V, ZG=ZL=50Ω f=806-870MHz, ZG=ZL=50Ω f=806-870MHz, ZG=ZL=50Ω f=806-870MHz, ZG=ZL=50Ω Ratings 9.2 4 70 5 -30 to +100 -40 to +100 Unit V V m W W °C °C Note. Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Ω unless otherwise noted) Symbol f PO ηT 2f O ρin Frequency range Output power Total efficiency 2nd. harmonic Input VSWR Stability Load VSWR tolerance Parameter Test conditions Limits Min 806 3 30 Max 870 Unit MHz W % d Bc VDD=7.2V, VGG=3.5V, Pin=50m W ZG=ZL=50Ω, VDD=5-9.2V, Load VSWR <4:1 VDD=9V, Pin=50m W, PO=3W (VGG Adjust), ZL=20:1 -28 4 No parasitic oscillation No degradation or destroy Note. Above parameters, ratings, limits and test conditions are subject to change. Nov. ´97 MITSUBISHI RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3W, FM PORTABLE RADIO TYPICAL PERFORMANCE DATA OUTPUT POWER, INPUT VSWR, TOTAL EFFICIENCY VS. FREQUENCY 7 6 5 4 3 2 ρin PO ηT 70 60 50 40 30 1.0 f=806MHz VDD=7.2V VGG=3.5V ZG=ZL=50Ω 0.1 1 10 INPUT POWER Pin (m W) 0.1 100 1.0 10.0 PO 10.0 OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER 100.0 100.0 ηT 20 VDD=7.2V VGG=3.5V 1 Pin=50m W 10 ZG=ZL=50 Ω 0 0 800 810 820 830 840 850 860 870 880 FREQUENCY f (MHz) OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER 100.0 ηT 5 10.0 PO 3 1.0 f=870MHz VDD=7.2V VGG=3.5V ZG=ZL=50Ω 0.1 1 10 INPUT POWER Pin (m W) 0.1 100 1.0 2 1 10.0 4 100.0 6 OUTPUT POWER, TOTAL...