• Part: M6MGB160S4BVP
  • Description: CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
  • Manufacturer: Mitsubishi Electric
  • Size: 257.23 KB
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Mitsubishi Electric
M6MGB160S4BVP
M6MGB160S4BVP is CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP manufactured by Mitsubishi Electric.
MITSUBISHI LSIs M6MGB/T160S4BVP 16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144WORD BY 16-BIT / 524,288-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package) DESCRIPTION Features The MITSUBISHI M6MGB/T160S4BVP is a Stacked Multi - Access time Chip Package (S-MCP) that contents 16M-bits flash memory Flash Memory 90ns (Max.) and 4M-bits Static RAM in a 48-pin TSOP (TYPE-I). SRAM 85ns (Max.) - Supply voltage Vcc=2.7 ~ 3.6V 16M-bits Flash memory is a 2097152 bytes /1048576 words, - Ambient temperature 3.3V-only, and high performance non-volatile memory W version Ta=-20 ~ 85°C fabricated by CMOS technology for the...