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M6MGB166S4BWG Datasheet

Manufacturer: Mitsubishi Electric
M6MGB166S4BWG datasheet preview

Datasheet Details

Part number M6MGB166S4BWG
Datasheet M6MGB166S4BWG_MitsubishiElectricSemiconductor.pdf
File Size 253.58 KB
Manufacturer Mitsubishi Electric
Description CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP
M6MGB166S4BWG page 2 M6MGB166S4BWG page 3

M6MGB166S4BWG Overview

The MITSUBISHI M6MGB/T166S4BWG is a Stacked Chip Scale Package (S-CSP) that contents 16M-bits flash memory and 4M-bits Static RAM in a 72-pin S-CSP. 16M-bits Flash memory is a 1,048,576 words, 3.3V-only, and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and DINOR(DIvided bit-line NOR) architecture for the memory cell. 4M-bits SRAM is a 262,144words unsynchronous SRAM...

M6MGB166S4BWG Key Features

  • Access time Flash Memory 90ns (Max.) SRAM 85ns (Max.)
  • Supply voltage Vcc=2.7 ~ 3.6V
  • Ambient temperature I version Ta=-40 ~ 85°C
  • Package : 72-pin S-CSP , 0.8mm ball pitch
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M6MGB166S4BWG Distributor

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