M6MGB162S2BVP Overview
FEATURES Access time The MITSUBISHI M6MGB/T162S2BVP is a Stacked Multi Flash Memory 90ns ( Max.) Chip Package (S-MCP) that contents 16M-bits flash memory SRAM 85ns (Max.) and 2M-bits Static RAM in a 48-pin TSOP (TYPE-I). Supply voltage Vcc=2.7 ~ 3.6V Ambient temperature 16M-bits Flash memory is a 1048576 words, 3.3V-only, and W version Ta=-20 ~ 85°C high performance non-volatile memory fabricated by CMOS Package :...
M6MGB162S2BVP Key Features
- Access time The MITSUBISHI M6MGB/T162S2BVP is a Stacked Multi Flash Memory 90ns ( Max.) Chip Package (S-MCP) that conten
- Supply voltage Vcc=2.7 ~ 3.6V
- Ambient temperature 16M-bits Flash memory is a 1048576 words, 3.3V-only, and W version Ta=-20 ~ 85°C high performance no
- Package : 48-pin TSOP (Type-I) , 0.4mm lead pitch technology for the peripheral circuit and DINOR(DIvided bit-line NOR)