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M6MGB162S2BVP - CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP

Key Features

  • Access time The.

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16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY & 2,097,152-BIT (262,144-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package) M6MGB/T162S2BVP MITSUBISHI LSIs DESCRIPTION FEATURES • Access time The MITSUBISHI M6MGB/T162S2BVP is a Stacked Multi Flash Memory 90ns ( Max.) Chip Package (S-MCP) that contents 16M-bits flash memory SRAM 85ns (Max.) and 2M-bits Static RAM in a 48-pin TSOP (TYPE-I). • Supply voltage Vcc=2.7 ~ 3.6V • Ambient temperature 16M-bits Flash memory is a 1048576 words, 3.3V-only, and W version Ta=-20 ~ 85°C high performance non-volatile memory fabricated by CMOS • Package : 48-pin TSOP (Type-I) , 0.4mm lead pitch technology for the peripheral circuit and DINOR(DIvided bit-line NOR) architecture for the memory cell.