MGF7168C Datasheet | Mitsubishi Electric

MITSUBISHI SEMICONDUCTOR<Ga As MMIC> Technical Note Specifications are subject to change without notice. UHF BAND Ga As POWER AMPLIFIER DESCRIPTION MGF7168C is a monolithic microwave integrated circuit for use in UHF-band power amplifier. PIN CONFIGURATION (TOP VIEW) Pi Vg1 Vd1 R Vd2 / Po Vg2 Pin : RF input (Note1) Pout : RF output (Note1) Vd1 : Drain bias 1 Vd2 : Drain bias 2 Vg1 : Gate bias 1 Vg2 : Gate bias 2 GND : Connect to GND CASE : Connect to GND : Connect to GND through R the resistor Note1: Connect to matching circuits. Features - Low voltage operation Vd=3.2V - High output power Po=33d Bm (typ.) @1710~1785MHz Po=33d Bm (typ.) @1850~1910MHz - High efficiency Id=1250m A (typ. ) @Po=33d Bm - Small size 6.1x7.0x1.10mm - Surface mount package - 2 Stage Amplifier - External matching circuit is required GND GND APPLICATION - 1.8GHz band handheld phone - 1.9GHz band handheld phone QUALITY GRADE - GG - Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary, circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. MITSUBISHI ELECTRIC (1/12) Mar.'97 MITSUBISHI SEMICONDUCTOR<Ga As MMIC> UHF BAND Ga As POWER...