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MGF7168C Datasheet Uhf Band Gaas Power Amplifier

Manufacturer: Mitsubishi Electric

Overview: MITSUBISHI SEMICONDUCTOR Technical Note Specifications are subject to change without notice.

General Description

MGF7168C is a monolithic microwave integrated circuit for use in UHF-band power amplifier.

PIN CONFIGURATION (TOP VIEW) Pi Vg1 Vd1 R Vd2 / Po Vg2 Pin : RF input (Note1) Pout : RF output (Note1) Vd1 : Drain bias 1 Vd2 : Drain bias 2 Vg1 : Gate bias 1 Vg2 : Gate bias 2 GND : Connect to GND CASE : Connect to GND : Connect to GND through R the resistor Note1: Connect to matching circuits.

Key Features

  • - Low voltage operation Vd=3.2V - High output power Po=33dBm (typ. ) @1710~1785MHz Po=33dBm (typ. ) @1850~1910MHz - High efficiency Id=1250mA (typ. ) @Po=33dBm - Small size 6.1x7.0x1.10mm - Surface mount package - 2 Stage Amplifier - External matching circuit is required GND GND.

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