MGF7169C Datasheet | Mitsubishi Electric

MITSUBISHI SEMICONDUCTOR <Ga As MMIC> Technical Note Specifications are subject to change without notice. UHF BAND Ga As POWER AMPLIFIER DESCRIPTION The MGF7169C is a monolithic microwave integrated circuit for use in CDMA base handheld phone. PIN CONFIGURATION (TOP VIEW) Pi Vg1 Vd1 MC Vg2 : RF input Pi : RF output Po Vd1 : Drain bias 1 Vd2 : Drain bias 2 : Gate bias Vg MC : Note1 GND : Connect to GND CASE : Connect to GND Note1:Connect to matching circuit GND GND Vd2 / Po Features Low voltage operation : Vd=3.0V High output power : Po=28d Bm typ. @f=1.85~1.91GHz Low distortion : ACP=-46d Bc max. @Po=28d Bm High efficiency : Id=520m A typ. @Po=28d Bm Small size : 7.0 x 6.1 x 1.1 mm Surface mount package 2 Stage Amplifier External matching circuit is required APPLICATION 1.9GHz band handheld phone QUALITY GRADE Block Diagram of this IC and Application Circuit Example. VDD Regulator Battery VD1 VD2 Matching circuit Matching circuit HPA VG1 VG2 Pin Pout Negative voltage generator - Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary, circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. MITSUBISHI ELECTRIC (1/20) Aug. '97 MITSUBISHI SEMICONDUCTOR <Ga As MMIC> Preliminary information UHF BAND Ga As POWER...