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MGF7169C - UHF BAND GaAs POWER AMPLIFIER

Description

The MGF7169C is a monolithic microwave integrated circuit for use in CDMA base handheld phone.

Features

  • Low voltage operation : Vd=3.0V High output power : Po=28dBm typ. @f=1.85~1.91GHz Low distortion : ACP=-46dBc max. @Po=28dBm High efficiency : Id=520mA typ. @Po=28dBm Small size : 7.0 x 6.1 x 1.1 mm Surface mount package 2 Stage Amplifier External matching circuit is required.

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Datasheet Details

Part number MGF7169C
Manufacturer Mitsubishi
File Size 351.65 KB
Description UHF BAND GaAs POWER AMPLIFIER
Datasheet download datasheet MGF7169C Datasheet
Additional preview pages of the MGF7169C datasheet.

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Full PDF Text Transcription

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MITSUBISHI SEMICONDUCTOR Technical Note Specifications are subject to change without notice. MGF7169C UHF BAND GaAs POWER AMPLIFIER DESCRIPTION The MGF7169C is a monolithic microwave integrated circuit for use in CDMA base handheld phone. PIN CONFIGURATION (TOP VIEW) Pi Vg1 Vd1 MC Vg2 : RF input Pi : RF output Po Vd1 : Drain bias 1 Vd2 : Drain bias 2 : Gate bias Vg MC : Note1 GND : Connect to GND CASE : Connect to GND Note1:Connect to matching circuit GND GND Vd2 / Po FEATURES Low voltage operation : Vd=3.0V High output power : Po=28dBm typ. @f=1.85~1.91GHz Low distortion : ACP=-46dBc max. @Po=28dBm High efficiency : Id=520mA typ. @Po=28dBm Small size : 7.0 x 6.1 x 1.1 mm Surface mount package 2 Stage Amplifier External matching circuit is required APPLICATION 1.
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