MGF7170AC Datasheet | Mitsubishi Electric

MITSUBISHI SEMICONDUCTOR <Ga As MMIC> Technical Note Specifications are subject to change without notice. UHF BAND Ga As POWER AMPLIFIER DESCRIPTION The MGF7170AC is a monolithic microwave integrated circuit for use in CDMA base handheld phone. PIN CONFIGURATION (TOP VIEW) Pi GND Vd1 Ext Vg GND Po / Vd2 Features -Low voltage operation : Vd=3.0V -High output power : Po=28d Bm typ. @f=1.715~1.78GHz -Low distortion : ACP=-46d Bc max. @Po=28d Bm -High efficiency : Id=520m A typ. @Po=28d Bm -Small size : 7.0 x 6.1 x 1.1 mm Single voltage operation (NVG include) Surface mount package 2 Stage Amplifier External matching circuit is required APPLICATION 1.9GHz band handheld phone Pi : RF input Po : RF output Vd1 : Drain bias 1 Vd2 : Drain bias 2 Vg : Gate bias(positive bias) GND : Connect to GND Ext : Connect to Capacitor CASE : Connect to GND QUALITY GRADE ES1:different pin configuration Block Diagram of this IC and Application Circuit Example. Regulator Battery VDD2 VDD1 VD1 Negative voltage generator Pout VD2 Matching circuit Matching circuit HPA Pin - Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary, circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. MITSUBISHI ELECTRIC (1/16) Aug. '97 MITSUBISHI SEMICONDUCTOR <Ga As MMIC> Preliminary information UHF BAND Ga As POWER...