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MGF7170AC - UHF BAND GaAs POWER AMPLIFIER

Description

The MGF7170AC is a monolithic microwave integrated circuit for use in CDMA base handheld phone.

Features

  • -Low voltage operation : Vd=3.0V -High output power : Po=28dBm typ. @f=1.715~1.78GHz -Low distortion : ACP=-46dBc max. @Po=28dBm -High efficiency : Id=520mA typ. @Po=28dBm -Small size : 7.0 x 6.1 x 1.1 mm Single voltage operation (NVG include) Surface mount package 2 Stage Amplifier External matching circuit is required GND.

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Datasheet Details

Part number MGF7170AC
Manufacturer Mitsubishi
File Size 316.70 KB
Description UHF BAND GaAs POWER AMPLIFIER
Datasheet download datasheet MGF7170AC Datasheet
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MITSUBISHI SEMICONDUCTOR Technical Note Specifications are subject to change without notice. MGF7170AC UHF BAND GaAs POWER AMPLIFIER DESCRIPTION The MGF7170AC is a monolithic microwave integrated circuit for use in CDMA base handheld phone. PIN CONFIGURATION (TOP VIEW) Pi GND Vd1 Ext Vg GND Po / Vd2 FEATURES -Low voltage operation : Vd=3.0V -High output power : Po=28dBm typ. @f=1.715~1.78GHz -Low distortion : ACP=-46dBc max. @Po=28dBm -High efficiency : Id=520mA typ. @Po=28dBm -Small size : 7.0 x 6.1 x 1.1 mm Single voltage operation (NVG include) Surface mount package 2 Stage Amplifier External matching circuit is required GND APPLICATION 1.
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