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MGF7176C - 3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER

Description

The MGF7176C is a monolithic microwave integrated circuit for use in CDMA base handheld phone.

Features

  • Low voltage operation : Vd=3.0V High output power : Po=28dBm typ. @f=1.75~1.78GHz Low distortion : ACP=-46dBc max. @Po=28dBm,1.25MHz off-set. High efficiency : Id=560mA typ. @Po=28dBm Single voltage operation (NVG include) Enable to Gain control Surface mount package 3 Stage Amplifier with gain control External matching circuit is required GND OUT GND VSS VD_LEV VT GND IN.

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Datasheet Details

Part number MGF7176C
Manufacturer Mitsubishi
File Size 22.27 KB
Description 3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER
Datasheet download datasheet MGF7176C Datasheet
Additional preview pages of the MGF7176C datasheet.

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Full PDF Text Transcription

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MITSUBISHI SEMICONDUCTOR PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MGF7176C 3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER DESCRIPTION The MGF7176C is a monolithic microwave integrated circuit for use in CDMA base handheld phone. PIN CONFIGURATION (TOP VIEW) FEATURES Low voltage operation : Vd=3.0V High output power : Po=28dBm typ. @f=1.75~1.78GHz Low distortion : ACP=-46dBc max. @Po=28dBm,1.25MHz off-set. High efficiency : Id=560mA typ. @Po=28dBm Single voltage operation (NVG include) Enable to Gain control Surface mount package 3 Stage Amplifier with gain control External matching circuit is required GND OUT GND VSS VD_LEV VT GND IN APPLICATION 1.7GHz band handheld phone (7mmx6.
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