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PRELIMINARY
Notice : This is not a final specification Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR
MGFC5212
K-Band 2-Stage Power Amplifier
DESCRIPTION
The MGFC5212 is a GaAs MMIC chip especially designed for 24.5 ~ 26.5 GHz band High Power Amplifier (HPA) .
BLOCK DIAGRAM
Vg1 Vg2
FEATURES
RF frequency : 24.5 to 26.5 GHz Linear gain : ≥ 13 dB P1dB : ≥ 23 dBm DC power : Vd = 5 V, Id1 + Id2 = 270 mA
In
Out
Vd1
Vd2
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Symbol Vd1, Vd2 Vg1, Vg2 Id1 Id2 Pin Ta Tstg Tmax Parameter Drain supply voltage Gate supply voltage Drain current 1 Drain current 2 RF input power Backside ambient temp. Storage temp. Maximum assembly temp. Ratings 6 -3 ~ 0.
MGFC5212 Datasheet
