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MGFC5214 - Q-Band 2-Stage Power Amplifier

Description

The MGFC5214 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band High Power Amplifier (HPA) .

Features

  • RF frequency : 37.0 to 43.0 GHz Linear gain : 12 dB (TYP. )@ 37 to 40 GHz 10 dB(TYP. ) @ 40 to 43 GHz P1dB : ≥ 23 dBm(min. ) @ 37 to 40 GHz ≥ 23 dBm(target) @ 40 to 43 GHz RFin RFout GND (Vg1) Vd1 Vg2 Vd2 TARGET.

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Full PDF Text Transcription

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PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5214 Q-Band 2-Stage Power Amplifier DESCRIPTION The MGFC5214 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band High Power Amplifier (HPA) . BLOCK DIAGRAM GND Vg1 Vd1 Vg2 Vd2 FEATURES RF frequency : 37.0 to 43.0 GHz Linear gain : 12 dB (TYP.)@ 37 to 40 GHz 10 dB(TYP.) @ 40 to 43 GHz P1dB : ≥ 23 dBm(min.) @ 37 to 40 GHz ≥ 23 dBm(target) @ 40 to 43 GHz RFin RFout GND (Vg1) Vd1 Vg2 Vd2 TARGET SPECIFICATIONS (Ta=25˚C) Parameter Frequeny Linear Gain P1dB Input VSWR Output VSWR Vd Vg Chip Size Parameter Frequeny Linear Gain P1dB Input VSWR Output VSWR Vd Vg Chip Size Vd1=4.5, Vd2=6 -0.2 1.99x1.60 (23) 2.2 2.3 V V mm2 Min. 40 10 Vd1=4.
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