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MGFC5213 - K-Band 2-Stage Power Amplifier

Description

The MGFC5213 is a GaAs MMIC chip especially designed for 27.5 ~ 30.0 GHz band High Power Amplifier (HPA) .

Features

  • RF frequency : 27.5 to 30.0 GHz Linear gain : ≥ 9 dB P1dB : ≥ 29 dBm DC power : Vd = 5 V, Id1 + Id2 = 1080 mA Vg1 Vg2 Vd1 Vd2 In Vd1 Out.

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Full PDF Text Transcription

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PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5213 K-Band 2-Stage Power Amplifier DESCRIPTION The MGFC5213 is a GaAs MMIC chip especially designed for 27.5 ~ 30.0 GHz band High Power Amplifier (HPA) . BLOCK DIAGRAM Vg1 Vg2 Vd1 Vd2 FEATURES RF frequency : 27.5 to 30.0 GHz Linear gain : ≥ 9 dB P1dB : ≥ 29 dBm DC power : Vd = 5 V, Id1 + Id2 = 1080 mA Vg1 Vg2 Vd1 Vd2 In Vd1 Out ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C) Symbol Vd1, Vd2 Vg1, Vg2 Id1 Id2 Pin Ta Tstg Tmax Parameter Drain supply voltage Gate supply voltage Drain current 1 Drain current 2 RF input power Backside ambient temp. Storage temp. Maximum assembly temp. Ratings 6 -3 ~ 0.
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