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MGFK30V4045 Datasheet

Manufacturer: Mitsubishi Electric
MGFK30V4045 datasheet preview

MGFK30V4045 Details

Part number MGFK30V4045
Datasheet MGFK30V4045_MitsubishiElectricSemiconductor.pdf
File Size 113.29 KB
Manufacturer Mitsubishi Electric
Description power GaAs FET
MGFK30V4045 page 2 MGFK30V4045 page 3

MGFK30V4045 Overview

The MGFK30V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

MGFK30V4045 Key Features

  • High output power
  • 14.5GHz
  • High linear power gain
  • 14.5GHz
  • High power added efficiency
  • 14.5GHz
  • 14.5 GHz band power amplifiers
  • VDS=8V
  • ID=350mA Refer to Bias Procedure

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