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MGFK33V4045 - power GaAs FET

Description

The MGFK33V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0

14.5 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Features

  • Internally matched to 50(ohm) system Flip-chip mounted.
  • High output power P1dB=2.0W (TYP. ) @f=14.0.
  • 14.5GHz.
  • High linear power gain GLP=7.0dB (TYP. ) @f=14.0.
  • 14.5GHz.
  • High power added efficiency P. A. E. =22% (TYP. ) @f=14.0.
  • 14.5GHz.

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Datasheet preview – MGFK33V4045

Datasheet Details

Part number MGFK33V4045
Manufacturer Mitsubishi
File Size 131.55 KB
Description power GaAs FET
Datasheet download datasheet MGFK33V4045 Datasheet
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< X/Ku band internally matched power GaAs FET > MGFK33V4045 14.0 – 14.5 GHz BAND / 2W DESCRIPTION The MGFK33V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Internally matched to 50(ohm) system Flip-chip mounted  High output power P1dB=2.0W (TYP.) @f=14.0 – 14.5GHz  High linear power gain GLP=7.0dB (TYP.) @f=14.0 – 14.5GHz  High power added efficiency P.A.E.=22% (TYP.) @f=14.0 – 14.5GHz APPLICATION  14.0 – 14.
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