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MGFK35V4045 - power GaAs FET

Description

The MGFK35V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0

14.5 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Features

  • Internally matched to 50(ohm) system Flip-chip mounted.
  • High output power P1dB=3.5W (TYP. ) @f=14.0.
  • 14.5GHz.
  • High linear power gain GLP=6.4dB (TYP. ) @f=14.0.
  • 14.5GHz.
  • High power added efficiency P. A. E. =20% (TYP. ) @f=14.0.
  • 14.5GHz.

📥 Download Datasheet

Datasheet preview – MGFK35V4045

Datasheet Details

Part number MGFK35V4045
Manufacturer Mitsubishi
File Size 136.10 KB
Description power GaAs FET
Datasheet download datasheet MGFK35V4045 Datasheet
Additional preview pages of the MGFK35V4045 datasheet.

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Full PDF Text Transcription

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< X/Ku band internally matched power GaAs FET > MGFK35V4045 14.0 – 14.5 GHz BAND / 3.5W DESCRIPTION The MGFK35V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Internally matched to 50(ohm) system Flip-chip mounted  High output power P1dB=3.5W (TYP.) @f=14.0 – 14.5GHz  High linear power gain GLP=6.4dB (TYP.) @f=14.0 – 14.5GHz  High power added efficiency P.A.E.=20% (TYP.) @f=14.0 – 14.5GHz APPLICATION  14.0 – 14.5 GHz band power amplifiers QUALITY GRADE  IG RECOMMENDED BIAS CONDITIONS  VDS=10V  ID=1.
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