MGFK35V4045 Datasheet | Mitsubishi Electric

DESCRIPTION The MGFK35V4045 is an internally impedance-matched Ga As power FET especially designed for use in 14.0 - 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Internally matched to 50(ohm) system Flip-chip mounted - High output power P1d B=3.5W (TYP.) @f=14.0 - 14.5GHz - High linear power gain GLP=6.4d B (TYP.) @f=14.0 - 14.5GHz - High power added efficiency P.A.E.=20% (TYP.) @f=14.0 - 14.5GHz APPLICATION - 14.0 - 14.5 GHz band power amplifiers QUALITY GRADE - IG REMENDED BIAS CONDITIONS - VDS=10V - ID=1.2A Refer to Bias Procedure Absolute maximum ratings (Ta=25C) Symbol Parameter Ratings VGDO Gate to drain breakdown voltage -15 VGSO Gate to source breakdown voltage -15 ID Drain current IGR Reverse gate current -9 IGF Forward gate current - 1 Total power dissipation Tch...