The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BFR30LT1/D
JFET Amplifiers
N–Channel
2 SOURCE 3 GATE
BFR30LT1 BFR31LT1
3 1
1 DRAIN
2
CASE 318 – 08, STYLE 10 SOT– 23 (TO – 236AB)
MAXIMUM RATINGS
Rating Drain – Source Voltage Gate – Source Voltage Symbol VDS VGS Value 25 25 Unit Vdc Vdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.
BFR30LT1 Datasheet
