NXP Semiconductors BFR30
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.| Part No. | BFR30 |
|---|---|
| Datasheet | BFR30 Download |
| Manufacturer |  NXP Semiconductors |
| Description | N-channel field-effect transistors |
| Buy | Stock & Price |
DESCRIPTION
Planar epitaxial symmetrical junction N-channel field-effect transistor in a plastic SOT23 package.APPLICATIONS
● Low level general purpose amplifiers in thick and thin-film circuits. PINNING - SOT23 PIN 1 2 3 Note 1. Drain and source are interchangeable. SYMBOL d s gDESCRIPTION
drain(1) source(1) gate 1 Top view 2 handbook, halfpage BFR30; BFR31 3 d s g MAM385 Marking codes: BFR30: M1p. BFR31: M2p. Fig.1 Simplified outline and symbol. CAUTION QUICK REFERENCE DATA SYMBOL VDS VGSO Ptot IDSS PARAMETER drain-source voltage gate-source voltage total power dissipation drain current BFR30 BFR31 yfs common-source transfer admittance BFR30 BFR31 ID = 1 mA; VDS = 10 V; f = 1 kHz 1 1.5 4 4.5 mS mS open drain Tamb ≤ 40 °C VGS = 0; VDS = 10 V 4 1 10 5 mA mA CONDITIONS − − − MIN. MAX. ±25 −25 250 UNIT V V mW 1997 Dec 05 2 Philips Semiconductors Product specification N-channel field-effect transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VDGO VGSO ID IG Ptot Tstg Tj Note 1.
