| Part Number | BFR30 |
|---|---|
| Manufacturer | Motorola Semiconductor |
| Overview | BFR30,31 MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage Symbol VDS vgs THERMAL CHARACTERISTICS Characteristic Symbol "Total Device Dissipation, T^ = 25°C Derate above 25°C PD . . |
BFR30 Datasheet
The BFR30 is a JFET.
| Part Number | BFR30 |
|---|---|
| Description | N-channel field-effect transistors |
| Manufacturer | NXP Semiconductors |
| Overview |
Planar epitaxial symmetrical junction N-channel field-effect transistor in a plastic SOT23 package. APPLICATIONS • Low level general purpose amplifiers in thick and thin-film circuits. PINNING - SOT23.
tot IDSS PARAMETER drain-source voltage gate-source voltage total power dissipation drain current BFR30 BFR31 yfs common-source transfer admittance BFR30 BFR31 ID = 1 mA; VDS = 10 V; f = 1 kHz 1 1.5 4 4.5 mS mS open drain Tamb ≤ 40 °C VGS = 0; VDS = 10 V 4 1 10 5 mA mA CONDITIONS * * * MIN. MAX. ±. |