H11B1 Datasheet Text
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by H11B1/D
GlobalOptoisolator™
H11B1
- [CTR = 500% Min]
6-Pin DIP Optoisolators Darlington Output (Low Input Current)
The H11B1 and H11B3 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. They are designed for use in applications requiring high output current (IC) at low LED input currents (IF).
- High Sensitivity to Low Input Drive Current (IF = 1 mA)
- To order devices that are tested and marked per VDE 0884 requirements, the suffix ”V” must be included at end of part number. VDE 0884 is a test option. Applications
- Appliances, Measuring Instruments
- I/O Interfaces for puters
- Programmable Controllers
- Interfacing and coupling systems of different potentials and impedances
- Solid State Relays
- Portable Electronics MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating INPUT LED Reverse Voltage Forward Current
- Continuous LED Power Dissipation @ TA = 25°C with Negligible Power in Output Detector Derate above 25°C OUTPUT DETECTOR Collector- Emitter Voltage Emitter- Base Voltage Collector- Base Voltage Collector Current
- Continuous Detector Power Dissipation @ TA = 25°C with Negligible Power in Input LED Derate above 25°C TOTAL DEVICE Isolation Surge Voltage(1) (Peak ac Voltage, 60 Hz, 1 sec Duration) Total Device Power Dissipation @ TA = 25°C Derate above 25°C Ambient Operating Temperature Range(2) Storage Temperature Range(2) VISO PD TA Tstg 7500 250 2.94
- 55 to +100
- 55 to +150 Vac(pk) mW mW/°C °C °C VCEO VEBO VCBO IC PD 25 7 30 100 150 1.76 Volts Volts Volts mA mW mW/°C VR IF PD 3 60 150 1.41 Volts mA mW mW/°C Symbol Value Unit
H11B3
[CTR = 100% Min]
- Motorola Preferred Device
STYLE 1 PLASTIC
6
1
STANDARD...
