• Part: 2N1008B
  • Description: PNP germanium transistor
  • Manufacturer: Motorola Semiconductor
  • Size: 61.53 KB
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Datasheet Summary

2N1008, A, B(GERMANIUM) 2Nl008B JAN AVAILABLE CASE31(~,1)_~ (TO-5) All ,leads isolated PNP germanium transistor for audio driver and medium speed switching applications. MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation TA = 25°C derate TC = 25°C derate Junction and storage Temperature Range Symbol VCB VCEO VEB Ie TJ , T stg 2110118 2N1008A 2N10118B 40 60 40 60 200 2.7S 300 4.0 -65 to +100 Unit Vdc Vdc Vdc mAdc mAdc mW mW/oC mW mW/oC °c ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristics : Collector Leakage Current ~~g: ~~ ~~~! TA...