• Part: 2N1011
  • Description: PNP germanium power transistor
  • Manufacturer: Motorola Semiconductor
  • Size: 94.05 KB
Download 2N1011 Datasheet PDF
2N1011 page 2
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Datasheet Summary

1011 2N (GERMANIUM) ~ CASE 11 (TO-3) PNP germanium power transistor for general purpose power amplifier and switching applications in military and industrial equipment. Operating temperature range and power dissipation exceed military specifications. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TC = 250 C Derate above 250 C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case POWER- TEMPERATURE DERATING CURVE ., 80 g:::: :6c 60 i rIl is .. 40 ~ ~ ~Q 20 10 o o Symbol VCEO VCES VCB...